Features of Metalorganic Chemical Vapor Deposition Selective Area Epitaxy of AlzGa1−zAs (0 ≤ z ≤ 0.3) Layers in Arrays of Ultrawide Windows

In-situ mask removal in selective area epitaxy using metal organic chemical vapor deposition

We demonstrate an in situ mask removal technique for use in selective area epitaxy (SAE) by metal organic chemical vapor deposition (MOCVD). The mask material is native aluminum oxide (AlxOy) formed by wet thermal oxidation of a thin AlGaAs layer. The AlxOy layer is patterned using standard photolithography and wet chemistry outside of chamber. The AlxOy layer forms a high-quality, pin-holefree...

Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy

Selective area metalorganic vapor-phase epitaxy of gallium arsenide on silicon

The selective area, metalorganic vapor-phase epitaxy of gallium arsenide on silicon substrates was investigated. Low-temperature arsenic passivation of the silicon surface was realized at 650 1C. A two-step growth method was used to deposit the GaAs films with an optimum nucleation temperature of 400 1C. Layers nucleated at 350 1C or below were found to be polycrystalline whereas those nucleate...

Time-Resolved Photoluminescence Characterization of GaN Layers Grown by Metalorganic Chemical Vapor Deposition

GaN layers with wurtzite structure were found to exhibit intense photoluminescence (PL) at 3.47eV (T = 10K) corresponding to recombination of excitons bound to neutral donors. The dependence of this luminescence on the growth conditions, layer thickness and density of excitation power was studied. New PL bands were evidenced in the UV region under high levels of excitation (Iexc 3 0.56mJ/cm ).

Selective Area Chemical Vapor Deposition of Chromium Oxides

We demonstrate that two-phase CrO2 and Cr2O3 thin films can be grown by using selective organometallic chemical vapor deposition through the oxidation of Cr(CO)6 in an oxygen environment. While the magnetization measurements show that both chromium oxides are present, the relative weight of each phase depends on the oxygen partial pressure. Changes of the Curie temperature, Tc, and the saturati...